Solid-state synthesis, structural variants and transformation of three-dimensional sulfides, AGaSnS4 (A=Na, K, Rb, Cs, Tl) and Na1.263Ga1.263Sn0.737S4

New cubic-AGaSnS₄ (A=Na, K, Rb, Cs, Tl) and orthorhombic-NaGaSnS₄ compounds were synthesized by solid-state reactions and characterized by X-ray diffraction and diffuse reflectance spectroscopy. Single crystals of orthorhombic-Na_1.263Ga_1.263Sn_0.737S₄ were obtained in the crystal growth attempts of sodium compound. All six new compounds have orthorhombic AgGaGeS₄ and cubic BaGa₂S₄ structures, as determined from single crystal X-ray structures of Na_1.263Ga_1.263Sn_0.737S₄ and cubic-AGaSnS₄ (A=Na, K, Rb). Orthorhombic-NaGaSnS₄ and known layered-KGaSnS₄ undergo structural transformation to thermodynamically stable cubic form.     

Growth transition and morphology change in polypropylene

The growth rate of isotactic polypropylene is deduced from microscopic observations during isothermal crystallizations. A change in the growth regime is observed at 138 C and interpreted as a Regime III Regime II transition, according to Hoffman's kinetic theory of polymer crystallization. A Regime II Regime I transition is also theoretically predicted at 155 C, i. e. at a temperature outside the investigated temperature range. The Regime III Regime II transition is related to the positive to negative change in the spherulite birefringence, which is generally attributed to a change in the organization of crystalline lamellae: quadritic arrays of intercrossing lamellae atT _c < 138 C (Regime III) and preferentially radiating lamellae atT _c > 138 C (Regime II). It is suggested that such a morphological change could be interpreted using the concept of non-adjacent re-entry introduced in Hoffman's kinetic theory. This interpretation could also explain the interspherulitic ruptures observed in negative spherulites.     

Studying Cu2–xSe phase transformation through DSC examination

The thermal effect accompanying the transition of Cu_2–xSe into a superionic conduction state was studied by non-isothermal measurements, at different heating and cooling rates (β=1, 2.5, 5, 10 and 20°C min^–1). During heating the peak temperature (T_p) remains almost stable for all values of β, (136.8±0.4°C for Cu₂Se and 133.0±0.3°C for Cu_1.99Se). A gradual shift of the initiation of the transformation towards lower temperatures is observed, as the heating rate increases. During cooling there is a significant shift in the position of the peak maximum (T_p) towards lower temperatures with the increase of the cooling rate. A small hysteresis is observed, which increases with the increase of the cooling rate, β. The mean value of transformation enthalpy was found to be 30.3±0.8 J g^–1 for Cu₂Se and 28.9±0.9 J g^–1 for Cu_1.99Se. The transformation can be described kinetically by the model f(ǯ)=(1–ǯ)^n(1+kcatX), with activation energy E=175 kJ mol^–1, exponent value n equal to 0.2, logA=20 and log(k_cat)= 0.5.     

Linked crystallites in the conducting topmost layer of polymer bilayer films controlled by temperature: from micro- to nanocrystallites.

Temperature has great impact on the structure and size of the linked crystallites of the conducting topmost layer formed at the surface of a polycarbonate film via the reaction BEDT-TTF+IBr [BEDT-TTF=bis(ethylenedithio)tetrathiafulvalene]. We show that fine temperature control permits formation of a semiconducting topmost layer of alpha'-(BEDT-TTF)(2)(I(x)Br(1-x))(3) crystallites with either micro- or nanometre size, a result that opens a route to miniaturized conducting plastic materials.     

铁氰化锰修饰玻碳电极的制备及其电化学性能

A thin film of manganese hexacyanoferrate （MnHCF） was electrochemically formed on a glassy carbon （GC） electrode to prepare a chemically modified electrode （CME）. The mechanism of film formation of MnHCF and its growth process were investigated in detail by cyclic voltammetry. The results show that the stoichiometric composition of MnHCF is Mn^ⅢFe^Ⅲ（CN）6, an analogue of prussian yellow. There exist three clear-cut stages in the whole modification process and the last stage is indispensable to the fabrication of homogenized, stable MnHCF film and must last for an appropriate time. The surface morphology of MnHCF/GC electrode was characterized by scanning electron microscopy （SEM）, which further verified the effective deposition of MnHCF film on GC. The kinetic constants of MnHCF/GC electrode process were also evaluated. The resulting MnHCF film modified electrode presented good stability and high electrocatalytic activity toward the oxidation of H2O2, indicating that MnHCF film possesses function of catalase and can be expected for analytical purposes.     

发用防晒剂DDABDT的反相高效液相色谱法测定

建立了反相高效液相色谱法测定发用防晒剂二甲基对胺基苯甲酰胺丙基十二烷基二甲胺甲苯磺酸盐(简称DDABDT)的方法.采用的色谱条件为色谱柱Symmetry C8柱,流动相为V(乙腈):V(10 mmol/L NaAc)=65:35溶液(含体积分数0.02%三氟乙酸,pH5.04),流速1.0 mL/min;检测波长305 nm;进样量20μL.DDABDT质量浓度为0.05～1000 mg/L时,其浓度与峰面积呈良好的线性关系(R2＞0.999),检出限为0.02 mg/L(S/N=3).洗发水A中DDABDT的回收率在98.0%～102%之间,发样提取液中DDABDT的平均回收率在85%～108%之间.洗发水中DDABDT浓度测定日内和日间相对标准分别为1.2%,3.4%.头发吸附DDABDT含量测定日内和日间相对标准偏差(RSD)分别为9.1%,9.8%.同时以高效液相色谱-电喷雾离子化质谱对色谱法测定样品的DDABDT峰进行了验证.该方法已用于洗发水及头发吸附DDABDT的分析.     

水热合成MoO3纳米带的生长机理研究

以离子交换法制备的氧化钼溶胶为前驱体，在水热条件下制备了单晶MoO₃纳米带，对样品进行了XRD、SEM和TEM分析。通过考察水热反应温度和时间对产物结构和形貌的影响，结合材料热力学和动力学理论，探讨了MoO₃纳米带在水热条件下的生长机理。离子交换法制备的溶胶在水热条件下首先转变为热力学亚稳相h-MoO₃六角柱，随着温度的升高和时间的延长，h-MoO₃按照溶解-重结晶过程转变为稳定相α-MoO₃纳米带。     

LB膜诱导Ba(NO3)2晶体取向生长

In this work, Ba(NO₃)₂ crystals with single crystal face were induced by using the the method of bio-mimetic mineralization and double LB films of behenic acid (BA) as the template. The crystals were characterized by Scanning Electron Microscope (SEM) and X-Ray Diffraction (XRD). The crystals were observed in regular square shape with uniform size about 5～8 μm by SEM, and they were found by XRD to grow along the (111) plane. From these experiments, we can conclude that the good selection of the (111) crystal face of Ba(NO₃)₂ is due to the electrostatic interactions , the match between this crystal face and the definite lattice structure of the LB films.     

非晶SiO2纳米灯笼的制备和表征

在1000 ℃用活性炭把二氧化锡粉末还原成单质锡, 锡作为催化剂, 硅片作为硅源同时作为收集衬底, 在硅片上制备出了非晶SiO2纳米灯笼. 灯笼的一端连在硅片上, 另一端为一个锡球, 中间是一些圆弧状的SiO2纳米线把两端相连. 纳米灯笼具有良好的对称性. 利用扫描电子显微镜(SEM)、高分辨透射电子显微镜(HRTEM)、选区电子衍射(SAED) 和HRTEM自带的能谱分析仪(EDS)对样品的表面形貌、微观结构和成分进行了分析研究. 结果表明, 灯笼中SiO2纳米线为非晶态, 结点是晶态锡, 结点表面覆盖一层非晶态的硅的氧化物. 结合实验条件对纳米灯笼的生长机理进行了讨论, 提出了纳米灯笼生长的一个模型.     

Growth, Band Structure and Optical Properties of LiSrBO3 Crystal

The bulk crystal of LiSrBO3 (8.39 g) with a size of 21mm×20mm×15mm was grown by high temperature solution growth method. The relationship between growth habit and crystal structure was discussed. The transmission spectrum shows an UV absorption edge at about 300 nm. The melting temperature of this crystal was determined to be 942 ℃ by DTA-TG measurement. The band structure of the LiSrBO3 crystal was studied by means of the first principle method. An indirect band gap was found to be about 4.0 eV,and a low dielectric constant was estimated to be about 1.9 in terms of theoretical results.